TechnologyChallenges of GaN-on-Si Power-Electronics Devices
(硅基氮化镓异质结功率电子器件的技术挑战)
Prof.Kevin Jing Chen (陈敬)
Fellowof IEEE
Departmentof Electronic and Computer Engineering
TheHong Kong University of Science and Technology
ClearWater Bay, Kowloon, Hong Kong
Email:eekjchen@ust.hk
Abstract:Wide-bandgap GaN-based power transistors and rectifiers are capableof delivering superior performance (e.g. lower on-state loss, higheroff-state breakdown, higher switching frequency, higher operatingtemperature, etc.) for electric power converters, owing to thematerials’ wide bandgap, high breakdown filed, and high electronsaturation velocity. Currently, the lateral GaN-based heterojunctiondevices grown on low-cost and highly scalable Si substrates (i.e.GaN-on-Si platform) are dominating the scene of technologydevelopment in both industry and academia. To successfullycommercialize GaN-on-Si power electronic devices, several keytechnical challenges need to be clearly understood and adequatelyaddressed.
Inthis talk, comprehensive discussions on the key challenges facingGaN-on-Si power device technology will be made from the view point ofobtaining power-electronics-relevant characteristics includingnormally-off operation, large positive threshold voltage, large gateswing, small Vth-instability, high breakdownvoltage and low dynamic on-resistance.
Biography:Prof. Kevin J. Chen received his B.S. degree from Peking University,Beijing, China in 1988, and PhD degree from University of Maryland,College Park, USA in 1993. His industry experience includesperforming R&D work on III-V high speed device technologies inNTT LSI Laboratories, Japan and Agilent Technologies, USA. Prof. Chenjoined Hong Kong University of Science and Technology (HKUST) in2000, where he is currently a full professor in the Department ofElectronic and Computer Engineering. Prof. Chen has more than 300publications in international journals and conference proceedings. Hehas been granted 8 US patents on GaN electron device technologies.Currently, his group focuses on developing GaN device technologiesfor power electronics, RF/microwave and high-temperature electronicsapplications.
Heis a Fellow of IEEE. He currently serves as a member in the compoundsemiconductor device and IC technology committee in IEEE ElectronDevice Society. He is a guest editor for the special issue of IEEETransactions on Electron Device on “GaN Electronic Devices”. Heis an associate editor for IEEE Transactions on Electron Devices, andhas also served as an associate editor for IEEE Transactions onMicrowave Theory and Techniques and Japanese Journal of AppliedPhysics.
讲座地点：逸夫科技馆北4楼ASIC中心会议室时间：1月28号，上午9:30～11:30
