| ◆ 获奖： 项目“硅基功率集成的可靠性关键技术与应用”获2013年教育部技术发明一等奖（第四完成人） ◆ 发表的相关论文： [1]. Siyang Liu, Weifeng Sun, Qingsong Qian, Jing Zhu, “Comparisons of hot-carrier degradation behavior in SOI-LIGBT and SOI-LDMOS with different stress conditions”, Solid-State Electronics, 2010(54), p1598-1601. (SCI收录，影响因子1.482) [2]. Siyang Liu, Weifeng Sun, Chuchu Ye, Zhenghua Tang, Qinsong Qian “A Novel pLEDMOS Device
with Large Current Capability and High Reliability for PDP Scan Driver IC”, Semiconductor Science and Technology, 2012(27), p1-5. (SCI收录，影响因子1.921) [3]. Siyang Liu, Weifeng Sun, Weijun Wan, Qinsong Qian,Tingting Huang “Hot-carrier Degradation Mechanism for p-type Symmetric LDMOS Transistor with Thick Gate Oxide”, Electronics Letters, 2012, Vol. 48, No.24. (SCI收录，影响因子1.038) [4]. Siyang Liu, Tingting Huang, Weifeng Sun, Chunwei Zhang, “Reliability Concern and Design for
the Lateral Insulator Gate Bipolar Transistor Based on SOI Substrate”, Solid-State Electronics, 2013(85), p28-35. (SCI收录，影响因子1.482) [5]. Siyang Liu, Weifeng Sun, Chunwei Zhang, Tingting Huang, Qinsong Qian “A Novel Model of Hot-carrier Degradation for Lateral IGBT Device on SOI Substrate”, Electronics Letters, 2013, Vol. 49, No.7. (SCI收录，影响因子1.038) [6]. Siyang Liu, Weifeng Sun, Weijun Wan, Wei Su, Shaorong Wang, Sulang Ma, “Anomalous Hot-Carrier-Induced Linear Drain Current Degradation of LDMOS Under Pulse Gate Stress With Different Amplitudes”,
IEEE Electron Device Letters, 2013, Vol. 34, No.6, p786-788. (SCI收录，影响因子2.789) [7]. Siyang Liu, Weifeng Sun, Rongxia Zhu, Tingting Huang, Chunwei Zhang, “Off-State Stress Degradation Analysis and Optimization for the High-Voltage SOI-pLEDMOS With Thick Gate Oxide”, IEEE Transactions on Electron Devices, 2013, Vol. 60, No.11, p3632-3638. (SCI收录，影响因子2.062) [8]. Siyang Liu, Rongxia Zhu, Kan Jia, Dong Huang, Weifeng Sun, Chunwei Zhang, “A Novel Model of the High-voltage VDMOS for the Circuit Simulation”, Solid-State Electronics, 2014(93), p21-26. (SCI收录，影响因子1.482)
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