| Basic Information |  |
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| XiaoDong Huang | | | | | Tel：+86-25-83792632 ext. 8816 | | | | | Email：xdhuang@seu.edu.cn | | | | | Address：RM 202, MEMS Key Laboratory, Nangao Building, 2# Sipailou,Southeast University, Nanjing, China | |  | | Research Interest |
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Energy harvesting and storage devices;
Microelectronic and nanoelectronic devices and fabrication technology
Recent Research Project：
1. CMOS compatible electrostatic energy harvester;
2. Novel lithium battery based on MEMS technology.3. TFT devices with high-k gate dielectric. |  | | Biographical Information |
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| Dr. Huang received the B.Eng. with the 1st class honor in electronic engineering from Southeast University (SEU) in 2005. Then, he continued his M. Eng study at SEU. His master dissertation entitled "A Study on Monolithic MEMS Capacitive Pressure Sensor" was awarded "Excellent Master Dissertations" by SEU. After graduation in Mar.2008, he served as an R&D IC designer in Qimonda, which was a global leading memory supplier. Supported by the studentship of the University of Hong Kong (HKU), he began 4-year full-time Ph. D. study at HKU from Sep. 2009. Due to his excellent performance, he was awarded his PhD degree half a year ahead of the normal time. From May 2013 to Dec. 2013, he was with the Hong Kong University of Science and Technology (HKUST) as Post-doc Researcher. He joined Southeast University in Dec. 2013 by "Overseas High-Level Talent Introduction Program" and has served as Associate Professor from then. |  | | Selected Publications |
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[1]X.D. Huang, J. Q Song, and P.T. Lai, "Effects of Thermal Annealing on La2O3 Gate Dielectric of InGaZnO Thin-Film Transistor," ECS Solid State Lett., vol. 4, no. 9, pp. Q44-Q46, 2015.
[2]X.D. Huang, P.T. Lai, L. Liu, and J.P. Xu, "Charge-trapping characteristics of fluorinated thin ZrO2 film for nonvolatile memory applications," Appl. Phys. Lett., vol. 104, no. 16, pp. 162905, 2014.
[3]X.D. Huang, Johnny K.O. Sin, and P.T. Lai, "Improved charge-trapping characteristics of BaTiO3 by Zr doping for nonvolatile memory applications," IEEE Electron Device Lett., vol. 34, no. 4, pp. 499-501, 2013.
[4]X. D. Huang, Johnny K.O. Sin, and P.T. Lai, "Ga2O3(Gd2O3) as charge-trapping layer for nonvolatile memory applications," IEEE Trans. Nanotechnol., vol. 12, no. 2, pp. 157-162, 2013.
[5]X.D. Huang, P.T. Lai, and Johnny K.O. Sin, "LaTiON/LaON as band-engineered charge-trapping layer for nonvolatile memory applications," Appl. Phys. A, vol. 108, no. 1, pp. 229-234, 2012.
[6]X.D. Huang, Johnny K.O. Sin, and P.T. Lai, "Fluorinated SrTiO3 as charge-trapping layer for nonvolatile memory applications," IEEE Trans. Electron Devices, vol. 58, no. 12, pp. 4235-4240, 2011.
[7]X.D. Huang, L. Liu, J.P. Xu, and P.T. Lai, "Improved charge-trapping properties of HfYON film for nonvolatile memory applications in comparison with HfON and Y2O3 films," Appl. Phys. Lett., vol. 99, no. 11, pp. 112903, 2011.
[8]X.D. Huang, P.T. Lai, L. Liu, and J.P. Xu, "Nitrided SrTiO3 as charge-trapping layer for nonvolatile memory applications," Appl. Phys. Lett., vol. 98, no. 24, pp. 242905, 2011.
[9]X.D. Huang, L. Liu, J.P. Xu, and P.T. Lai, "Improved performance of yttrium-doped Al2O3 as inter-poly dielectric for flash-memory applications," IEEE Trans. Device Mater. Rel., vol. 11, no. 3, pp. 490-494, 2011.
[10] 黄晓东，黄见秋，秦明，黄庆安，"A novel capacitive pressure sensor," 半导体学报, vol.29, no.3, pp. 66-70, 2008. |
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